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SPICE MODELS: DRDPB26W DRDN005W DRDN010W DRDNB16W DRDNB26W DRDP006W DRDPB16W
Features
NEW PRODUCT
* * * * * * * * * * *
Epitaxial Planar Die Construction One Transistor and One Switching Diode in One Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
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Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.008 grams (approx.)
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Lead-free Green
COMPLEX ARRAY FOR RELAY DRIVERS
A
SOT-363 Dim A
BC
Min 0.10 1.15 2.00 0.30 1.80 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
B C D F J H K L
0.65 Nominal
P/N DRDNB16W DRDPB16W DRDNB26W DRDPB26W
R1 (NOM) R2 (NOM) 1K 1K 220 220 10K 10K 4.7K 4.7K
DRDN010W/ DRDN005W
Maximum Ratings, Total Device
Characteristic Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3) Operating and Storage and Temperature Range
Maximum Ratings, DRDN010W NPN Transistor
Characteristic Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage
Collector Current (Note 3)
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@ TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 200 625 -55 to +150 Unit mW C/W C
S a
e h
t e
U 4
.c
R1
m o
M
All Dimensions in mm
R2 R1
R2
DRDP006W
DRDNB16W/ DRDNB26W
DRDPB16W/ DRDPB26W
@ TA = 25C unless otherwise specified Value 45 18 5 1000 @ TA = 25C unless otherwise specified Value 80 80 4.0 500 Unit V V V mA
Symbol VCBO VCEO VEBO IC
Maximum Ratings, DRDN005W NPN Transistor
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3)
Notes:
Symbol VCBO VCEO VEBO IC
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http: //www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
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Unit V V V mA
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Maximum Ratings, DRDP006W PNP Transistor
@ TA = 25C unless otherwise specified Value -60 -60 -5.0 -600 Unit V V V mA
NEW PRODUCT
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 3)
Symbol VCBO VCEO VEBO IC
Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor
Characteristic Supply Voltage Input Voltage Output Current Symbol VCC VIN IC
@ TA = 25C unless otherwise specified Value 50 -5 to +10 600 Unit V V mA
Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor
Characteristic Supply Voltage Input Voltage Output Current Symbol VCC VIN IC
@ TA = 25C unless otherwise specified Value 50 -5 to +5 600 Unit V V mA
Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor
Characteristic Supply Voltage Input Voltage Output Current Symbol VCC VIN IC
@ TA = 25C unless otherwise specified Value -50 +5 to -10 600 Unit V V mA
Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor
Characteristic Supply Voltage Input Voltage Output Current Symbol VCC VIN IC
@ TA = 25C unless otherwise specified Value -50 +5 to -5 -600 Unit V V mA
Maximum Ratings, Switching Diode
Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 3) Average Rectified Output Current (Note 3)
@ TA = 25C unless otherwise specified Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Value 100 75 53 500 250 4.0 2.0 Unit V V V mA mA A
Non-Repetitive Peak Forward Surge Current @ t = 1.0s @ t = 1.0s
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Electrical Characteristics, DRDN010W NPN Transistor
@ TA = 25C unless otherwise specified Unit V V V V A A MHz pF Test Condition IC = 100mA, VCE = 1V IC = 300mA, IB = 30mA IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz
NEW PRODUCT
Characteristic DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain-Bandwidth Product Capacitance
Symbol hFE VCE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO fT Cobo
Min 150 45 18 5 100
Max 800 0.5 1 1 8
Electrical Characteristics, DRDN005W NPN Transistor
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES hFE VCE(SAT) VBE(SAT) fT Min 80 80 4.0 100 100
@ TA = 25C unless otherwise specified Max 100 100 0.25 1.2 Unit V V V nA nA V V MHz Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 100A, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, IB = 10mA IC = 100mA, VCE = 1.0V VCE = 2.0V, IC = 10mA, f = 100MHz
Electrical Characteristics, DRDP006W PNP Transistor
Characteristic DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Current Gain-Bandwidth Product Capacitance Symbol hFE VCE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO fT Cobo Min 100 -60 -60 -5 200
@ TA = 25C unless otherwise specified Max 300 -0.4 -10 8 Unit V V V V nA MHz pF Test Condition IC = -150mA, VCE = -10V IC = -150mA, IB = -15mA IC = -10A, IE = 0 IC = -10mA, IB = 0 IE = -10A, IC = 0 VCB = -50V, IE = 0 VCE = -20V, IC = -50mA, f = 100MHz VCB = -10V, IE = 0, f = 1MHz @ TA = 25C unless otherwise specified Test Condition VCC = 5V, IO = 100A VO = 0.3V, IO = 20mA IO/Il = 50mA/2.5mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 50mA VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor
Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min 0.3 56 Typ 200 Max 2.0 0.3V 7.2 0.5 Unit V V V mA A MHz
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Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor
@ TA = 25C unless otherwise specified Test Condition
NEW PRODUCT
Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product
Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT
Min 0.5 47
Typ 200
Max 3.0 0.3V 28 0.5
Unit V V V mA A MHz
VCC = 5V, IO = 100A VO = 0.3V, IO = 20mA IO/Il = 50mA/2.5mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 50mA VCE = 10V, IE = 5mA, f = 100MHz @ TA = 25C unless otherwise specified Test Condition VCC = -5V, IO = -100A VO = -0.3V, IO = -20mA IO/Il = -50mA/-2.5mA VI = -5V VCC = -50V, VI = 0V VO = -5V, IO = -50mA VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor
Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min -0.3 56 Typ 200 Max -2.0 -0.3V -7.2 -0.5 Unit V V V mA A MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor
Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min -0.5 47 Typ 200 Max -3.0 -0.3V -28 -0.5 Unit V V V mA A MHz
@ TA = 25C unless otherwise specified Test Condition
VCC = -5V, IO = -100A VO = -0.3V, IO = -20mA IO/Il = -50mA/-2.5mA VI = -5V VCC = -50V, VI = 0V VO = -5V, IO = -50mA VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, Switching Diode
Characteristic Reverse Breakdown Voltage (Note 4) Forward Voltage (Note 4)
@ TA = 25C unless otherwise specified Min 75 0.62 Max 0.72 0.855 1.0 1.25 2.5 50 30 25 4.0 4.0 Unit V A A A nA pF ns Test Condition IR = 10A IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 75V VR = 75V, Tj = 150C VR = 25V, Tj = 150C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100
Symbol V(BR)R VF
Reverse Current (Note 4) Total Capacitance Reverse Recovery Time
Notes: 4. Short duration pulse test used to minimize self-heating effect.
IR CT trr
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Device Characteristics
250 PD, POWER DISSIPATION (mW)
1000
NEW PRODUCT
200
hFE, DC CURRENT GAIN
150
100
100
50
VCE = 1.0V
0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve (Total Device) 200
1 0.0001
.001
.01
.1
1
10
IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs Collector Current (DRDN010W)
100
f = 1MHz
1000
COBO, OUTPUT CAPACITANCE (pF)
VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV)
1 10 100
100
10
10
1 0.1
1 0.0001
.001
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Output Capacitance vs. Collector-Base Voltage (DRDN010W)
.01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 4, Collector Saturation Voltage vs Collector Current (DRDN010W)
10
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ICBO, COLLECTOR-BASE CURRENT (nA)
VCB = 80V
VCE, COLLECTOR EMITTER VOLTAGE (V)
10
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100
NEW PRODUCT
IC = 30mA IC = 10mA IC = 1mA
1
0.1
IC = 100mA
0.01 25
50
75
100
125
TA, AMBIENT TEMPERATURE (C) Fig. 5, Typical Collector-Cutoff Current vs. Ambient Temperature (DRDN005W)
IB, BASE CURRENT (mA) Fig. 6, Typical Collector Saturation Region (DRDN005W)
0.500 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.450 0.400 0.350 0.300 0.250 0.200 0.150 0.100 0.050 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7, Collector Emitter Saturation Voltage vs. Collector Current (DRDN005W)
1.0
VBE(ON), BASE EMITTER VOLTAGE (V)
fT, GAIN BANDWIDTH PRODUCT (MHz)
10000
IC IB = 10
hFE, DC CURRENT GAIN (NORMALIZED) 1000
VCE = 5V
TA = 150C
TA = 25C TA = 150C
100
TA = -50C
TA = 25C
10
TA = -50C
1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8, DC Current Gain vs Collector Current (DRDN005W)
1000
0.9 0.8
VCE = 5V
VCE = 5V
TA = -50C 0.7 0.6 0.5 0.4 0.3 0.2 TA = 150C TA = 25C
100
10
1
0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9, Base Emitter Voltage vs Collector Current (DRDN005W)
1 IC, COLLECTOR CURRENT (mA) Fig. 10, Gain Bandwidth Product vs Collector Current (DRDN005W)
10
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0.6
1.6
VCE, COLLECTOR-EMITTER VOLTAGE (V)
NEW PRODUCT
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
0.5 0.4
IC = 10 IB
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 1mA
IC = 10mA
IC = 300mA IC = 100mA
IC = 30mA
0.3 TA = 150C 0.2 TA = 25C
0.1
TA = -50C
0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig.11, Collector Emitter Saturation Voltage vs. Collector Current (DRDP006W)
1000 VCE = 5V TA = 150C hFE, DC CURRENT GAIN (NORMALIZED)
0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 12, Typical Collector Saturation Region (DRDP006W)
1.0 VCE = 5V 0.9 0.8 0.7 0.6 TA = 25C 0.5 0.4 0.3 0.2 TA = 150C TA = -50C
0.01
100 TA = 25C TA = -50C
10
1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 13, DC Current Gain vs Collector Current (DRDP006W)
VBE(ON), BASE EMITTER VOLTAGE (V)
0.1
1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 14, Base Emitter Voltage vs. Collector Current (DRDP006W)
1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V
30 20 C, CAPACITANCE (pF)
Cibo
100
10
10
5.0
Cobo
1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 15, Gain Bandwidth Product vs. Collector Current (DRDP006W) 100
1.0 -0.1
-1.0
-10
-30
REVERSE VOLTS (V) Fig. 16, Typical Capacitance (DRDP006W)
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IF, INSTANTANEOUS FORWARD CURRENT (mA)
IR, INSTANTANEOUS REVERSE CURRENT (nA)
1000
10000
TA = 125C
NEW PRODUCT
1000
100
TA = 75C
100
10
TA = -40C TA = 0C
10
TA = 25C
1
TA = 25C TA = 75C TA = 125C
1
TA = 0C TA = -40C
0.1 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 17, Typical Forward Characteristics (Switching Diode)
3
f = 1MHz
0.1 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Fig. 18, Typical Reverse Characteristics (Switching Diode)
CT, TOTAL CAPACITANCE (pF)
2.5
2
1.5
1
0.5
0 0 10 20 30 40 50
VR, REVERSE VOLTAGE (V) Fig. 19, Typical Capacitance vs. Reverse Voltage (Switching Diode)
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Ordering Information
(Note 5) Marking Code RD01 RD07 RD02 RD03 RD04 RD05 RD06 Packaging SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
NEW PRODUCT
Device DRDN010W-7 DRDN005W-7 DRDP006W-7 DRDNB16W-7 DRDNB26W-7 DRDPB16W-7 DRDPB26W-7
Notes:
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
RDxx
Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 2005 S Apr 4 May 5 2006 T Jun 6 Jul 7 2007 U Aug 8 Sep 9 2008 V Oct O Nov N 2009 W Dec D RDxx = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September
Sample Applications
R2 R1
Relay DRDN010W/ DRDN005W R1
YM
RL DRDP006W
DRDNB16W 1k
Relay
Relay
R2
RL
10k
RL
Application Example: DRDP006W current source Application Example: DRDN010W/DRDN005W configuration, bias resistors not included current sink configuration, bias resistors not included
Application Example: DRDNB16W current sink configuration with built-in bias resistors
10k 1k
Relay
4.7k 220 RL RL DRDPB26W
DRDPB16W
DRDNB26W 220
Relay
Relay
4.7k
RL
Application Example: DRDNB26W current sink configuration with built-in bias resistors (low R1)
Application Example: DRDPB16W current source configuration with built-in bias resistors
Application Example: DRDPB26W current source configuration with built-in bias resistors (low R1)
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